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Multi-beam multi-wavelength semiconductor lasers
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10.1063/1.3253713
/content/aip/journal/apl/95/16/10.1063/1.3253713
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3253713
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Electron micrograph of a QCL patterned with two gratings. The grating closer to the aperture contains 11 grooves and has a period; the other grating contains 25 grooves and has a period. The width and depth of the grooves are 0.6 and , respectively. The thickness of gold is about 200 nm. (b) Measured (left half) and simulated (right half) far-field emission patterns of the device. (The far-field patterns are symmetric so only half of them are shown.) (c) Vertical line scans of the measured (upper panel) and the simulated (lower panel) far-field pattern along the arrows in (b).

Image of FIG. 2.
FIG. 2.

LI characteristics taken before (dotted curve) and after (solid curve) patterning the plasmonic beam splitter for the device shown in Fig. 1 .

Image of FIG. 3.
FIG. 3.

(a) Electron micrograph of a dual-wavelength QCL patterned with a demultiplexer. (b) Measured (left half) and simulated (right half) far-field emission patterns of the device at . and (c) Measured (left half) and simulated (right half) far-field emission pattern of the device at . (d) Vertical line scans of (b) and (c) along the arrows. Upper and lower panels are, respectively, experimental and simulated results. Solid curves and dotted curves are for the and components, respectively.

Image of FIG. 4.
FIG. 4.

LI characteristics of the dual-wavelength device measured before (dotted curves) and after patterning the demultiplexer (solid curves).

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/content/aip/journal/apl/95/16/10.1063/1.3253713
2009-10-23
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Multi-beam multi-wavelength semiconductor lasers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3253713
10.1063/1.3253713
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