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Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method
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10.1063/1.3254230
/content/aip/journal/apl/95/16/10.1063/1.3254230
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3254230
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Flow sequence of AlN/GaN MQWs growths using PI method in GaN well layer (PI-GaN), while AlN barrier was grown by conventional continuous method (CT-AlN).

Image of FIG. 2.
FIG. 2.

HRXRD profiles of AlN/GaN MQWs grown at different temperatures with GaN buffer layer.

Image of FIG. 3.
FIG. 3.

FT-IR transmittance profiles of AlN/GaN MQWs grown at different temperatures. In order to identify ISB absorption, the ratio of transmissions of -polarized -polarized light was shown.

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/content/aip/journal/apl/95/16/10.1063/1.3254230
2009-10-23
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Blueshift of intersubband transition wavelength in AlN/GaN multiple quantum wells by low temperature metal organic vapor phase epitaxy using pulse injection method
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3254230
10.1063/1.3254230
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