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Efficient hole transport in asymmetric coupled InGaN multiple quantum wells
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10.1063/1.3254232
/content/aip/journal/apl/95/16/10.1063/1.3254232
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3254232
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the epitaxial structures investigated (a) and detailed parameters of active regions for AS-QWs (b) and CS-QWs (c).

Image of FIG. 2.
FIG. 2.

Integrated EL intensity as a function of forward current density for InGaN based LEDs with AS-QWs and CS-QWs active regions. The inset shows the relative EQE as a function of forward current density for the two samples.

Image of FIG. 3.
FIG. 3.

Forward current density as a function of forward voltage for InGaN based LEDs with AS-QWs and CS-QWs active regions.

Image of FIG. 4.
FIG. 4.

(a) EL FWHM as a function of forward current density for InGaN based LEDs with AS-QWs and CS-QWs active regions. (b) Normalized EL spectra of two samples at forward current density of 5 and .

Image of FIG. 5.
FIG. 5.

Band diagram and carrier transport mechanism for InGaN/GaN AS-QWs under a forward bias condition.

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/content/aip/journal/apl/95/16/10.1063/1.3254232
2009-10-23
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Efficient hole transport in asymmetric coupled InGaN multiple quantum wells
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/16/10.1063/1.3254232
10.1063/1.3254232
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