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Schematic diagram of the measurement setup. Right side shows schematically a large series array of SINIS Josephson junctions, equally divided into six subarrays on the substrate. Above it, the enlarged view is a photo of a small part of the meandering structure.
The curve of the series array without irradiation (curve a); the curve of the series array with irradiation at 75.2 GHz (curve b); dependence of emission power from the series array on measured by lock-in detector (curve c).
Emission power (◼) within 3 MHz resolution bandwidth of spectrum analyzer at peaks as a function of . The line is least-squares fit to the experimental data points, except for the three points surrounded by the dotted curve which came from subarrays with large difference in the resistance. Inset shows the emission peak observed by spectrum analyzer at . Scale: axis : 100 MHz/div., axis : 10 dB/div.
The resonance mode of the silicon substrate at 76 GHz is stimulated by the array of discrete ports with . (a) Distribution of axis electric field intensity on the substrate which serves as a dielectric resonator antenna. (b) Cross-section of the axis component of the electric field intensity shows coupling of the resonance mode of the substrate and the mode of the quasioptical resonator.
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