Scalable arrays of rf Paul traps in degenerate Si
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(a) Photograph of a two-layer silicon ion trap with a single trapping zone. The structure consists of two layers of silicon anodically bonded via a glass spacer. Inset: Fluorescence from a single laser-cooled ion imaged onto a camera (viewed from above). (b) The chip geometry in cross-section near the trapping region (indicated by a dot); not to scale. The interelectrode spacing was (e.g., between and near the ion). The ion-electrode distance was (e.g., the closest distance between and the ion). The primed electrodes are not visible in the photograph. The two-tiered etch of the silicon trap electrodes permits a large solid angle for efficient collection of ion fluorescence (dashed lines).
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(a) Photograph of a multizone surface electrode ion trap fabricated from a single SOI wafer. Annotations highlight three trap zones (indicated by circles): a load zone (electrodes ) and a pair of zones whose electrode surfaces were either bare silicon (electrodes ) or evaporated gold (, not all labels visible). Inset: Fluorescence from a pair of laser-cooled ion imaged onto a charge coupled device camera (viewed from above). (b) Chip geometry in cross-section near the loading zone; not to scale. The interelectrode spacing was (e.g., between and ). The was undercut about by a wet etch. A hole cut in layer permits passage of neutral from the back side of the wafer to the trap load zone without risk of shorting trap electrodes. The structural insulator was outside the field of view of the ions in all zones.
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