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X-ray diffraction results of the InGaN p-i-n solar cells with different In contents plotted in logarithm scales. (a) scanning profile and (b) (0002) rocking curve of the (0002) reflections.
I-V curves for InGaN p-i-n solar cells with different In contents under illumination of a Xe lamp. Inset shows the emission power density of the Xe lamp as a function of wavelength.
Dark current-reverse bias voltage (I-V) curves for the solar cells using a logarithm scale.
External quantum efficiency (EQE) for p-i-n solar cells with different In contents.
Open circuit voltage as a function of In content plotted together with other reported results.
Characteristics of InGaN p-i-n homojunction solar cells with different In contents.
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