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Fabrication and characterization of InGaN p-i-n homojunction solar cell
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10.1063/1.3254215
/content/aip/journal/apl/95/17/10.1063/1.3254215
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/17/10.1063/1.3254215

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction results of the InGaN p-i-n solar cells with different In contents plotted in logarithm scales. (a) scanning profile and (b) (0002) rocking curve of the (0002) reflections.

Image of FIG. 2.
FIG. 2.

I-V curves for InGaN p-i-n solar cells with different In contents under illumination of a Xe lamp. Inset shows the emission power density of the Xe lamp as a function of wavelength.

Image of FIG. 3.
FIG. 3.

Dark current-reverse bias voltage (I-V) curves for the solar cells using a logarithm scale.

Image of FIG. 4.
FIG. 4.

External quantum efficiency (EQE) for p-i-n solar cells with different In contents.

Image of FIG. 5.
FIG. 5.

Open circuit voltage as a function of In content plotted together with other reported results.

Tables

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Table I.

Characteristics of InGaN p-i-n homojunction solar cells with different In contents.

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/content/aip/journal/apl/95/17/10.1063/1.3254215
2009-10-28
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and characterization of InGaN p-i-n homojunction solar cell
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/17/10.1063/1.3254215
10.1063/1.3254215
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