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Scanning electron micrographs of a size GaAs substrate patterned with nanopores and a periodicity of 200 nm.
AFM images and line scans of patterned GaAs substrate using: [(a) and (c)] wet etching and [(b) and (d)] dry etching techniques prior to QDs regrowth.
AFM images and line scans of patterned GaAs substrate: [(a) and (c)] after atomic hydrogen cleaning at and [(b) and (d)] after thermal desorption at , prior to InAs QDs regrowth.
AFM images of patterned GaAs substrate after 30 ML GaAs buffer layer and 3 ML InAs layer are deposited on (a) wet-etched and (b) dry-etched GaAs patterned surfaces.
Room temperature photoluminescence spectra of self-assembled QDs (SAQDs) grown on unpatterned GaAs substrates (dashed line) and site-controlled QDs (SCQDs) grown on wet etching patterned GaAs substrates (solid line).
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