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Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor
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10.1063/1.3257733
/content/aip/journal/apl/95/17/10.1063/1.3257733
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/17/10.1063/1.3257733

Figures

Image of FIG. 1.
FIG. 1.

(a) The changes of carrier concentration and resistivity by hydrogen injection and ejection process, determined by Hall effect measurement at room temperature.

Image of FIG. 2.
FIG. 2.

The hysteresis loops obtained from MCD in the 2.17 eV at 20 K for (a) ZCO:H-1 and ZCO:H-2, (b) ZCO-1 and ZCO-2. And the M-H curves obtained from SQUID at 20 K for (c) ZCO:H-1 and ZCO:H-2, (d) ZCO-1 and ZCO-2.

Image of FIG. 3.
FIG. 3.

The BEs of (a) Zn and Zn , (b) Co and Co , and (c) O 1s for ZCO:H-1, ZCO-1, ZCO:H-2, and ZCO-2.

Image of FIG. 4.
FIG. 4.

SIMS depth profiles of (a) ZCO:H-1, (b) ZCO-1, (c) ZCO:H-2, and (d) ZCO-2.

Tables

Generic image for table
Table I.

The calculated level of the core states of atoms; Zn 2p, O 1s, and Co 2p, in defects and the H-complexes are shown relatively to those of pure ZnO or ZnCoO. Here we used the 36 atoms supercell of wurtzite ZnO.

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/content/aip/journal/apl/95/17/10.1063/1.3257733
2009-10-30
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reversible ferromagnetic spin ordering governed by hydrogen in Co-doped ZnO semiconductor
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/17/10.1063/1.3257733
10.1063/1.3257733
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