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(a) The changes of carrier concentration and resistivity by hydrogen injection and ejection process, determined by Hall effect measurement at room temperature.
The hysteresis loops obtained from MCD in the 2.17 eV at 20 K for (a) ZCO:H-1 and ZCO:H-2, (b) ZCO-1 and ZCO-2. And the M-H curves obtained from SQUID at 20 K for (c) ZCO:H-1 and ZCO:H-2, (d) ZCO-1 and ZCO-2.
The BEs of (a) Zn and Zn , (b) Co and Co , and (c) O 1s for ZCO:H-1, ZCO-1, ZCO:H-2, and ZCO-2.
SIMS depth profiles of (a) ZCO:H-1, (b) ZCO-1, (c) ZCO:H-2, and (d) ZCO-2.
The calculated level of the core states of atoms; Zn 2p, O 1s, and Co 2p, in defects and the H-complexes are shown relatively to those of pure ZnO or ZnCoO. Here we used the 36 atoms supercell of wurtzite ZnO.
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