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Trigonal paramagnetic interface defect in epitaxial
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10.1063/1.3237175
/content/aip/journal/apl/95/18/10.1063/1.3237175
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3237175
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Derivative-absorption K-band ESR spectra ( cumulative scans) observed at 4.2 K for several different orientations of on epi-. Applied modulation field amplitude was 0.4 G, and incident microwave power . The dashed curve guides the eye in exposing the -dependent shift while the dotted line presents a simulation of the observed signal at . The “large” signal at stems from a comounted Si:P marker sample.

Image of FIG. 2.
FIG. 2.

Angular map of the observed resonance on epi-, for rotating in the plane. The curves represent an optimized fit to the data for trigonal point symmetry of a defect in a bulk diamond (Ge) crystal. The absence of the dashed curve branches experimentally points to the interfacial nature of the revealed defect, with only the subset of crystallographically equivalent defects with DB direction occurring.

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/content/aip/journal/apl/95/18/10.1063/1.3237175
2009-11-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Trigonal paramagnetic interface defect in epitaxial Ge3N4/(111)Ge
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3237175
10.1063/1.3237175
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