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Direct integration of active semiconductors on Si(100)
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10.1063/1.3242002
/content/aip/journal/apl/95/18/10.1063/1.3242002
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3242002
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) 224 RSM plots of a virtually relaxed film indicating a residual tensile strain of likely induced by thermal cycling. (b) 224 RSM of indicating a compressive strain of −0.45% (relaxation line passes above the center of the alloy peak) and “pinned” lattice parameter . (c) Deviations of parallel (a) and “relaxed” () lattice constants of SiGeSn from for samples containing Si and Sn.

Image of FIG. 2.
FIG. 2.

Top: Plot of for SiGeSn alloys (black and gray) and a GeSn reference (dotted) with respect to Ge. Bottom: (left) Resistivity vs carrier content of -doped SiGeSn. The solid line and squares represent the resistivity of a reference bulk Ge measured electrically and by ellipsometry, respectively. (right) Compositional dependence of Si–Si and Ge–Ge modes in and corresponding .

Image of FIG. 3.
FIG. 3.

Gibbs free energy of and alloys over the Sn range from 0%–20% (and ) showing the significantly larger stability field of the ternary for the same Sn composition associated with the increased mixing entropy in the ternary.

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/content/aip/journal/apl/95/18/10.1063/1.3242002
2009-11-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Direct integration of active Ge1−x(Si4Sn)x semiconductors on Si(100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3242002
10.1063/1.3242002
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