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(a) 224 RSM plots of a virtually relaxed film indicating a residual tensile strain of likely induced by thermal cycling. (b) 224 RSM of indicating a compressive strain of −0.45% (relaxation line passes above the center of the alloy peak) and “pinned” lattice parameter . (c) Deviations of parallel (a) and “relaxed” () lattice constants of SiGeSn from for samples containing Si and Sn.
Top: Plot of for SiGeSn alloys (black and gray) and a GeSn reference (dotted) with respect to Ge. Bottom: (left) Resistivity vs carrier content of -doped SiGeSn. The solid line and squares represent the resistivity of a reference bulk Ge measured electrically and by ellipsometry, respectively. (right) Compositional dependence of Si–Si and Ge–Ge modes in and corresponding .
Gibbs free energy of and alloys over the Sn range from 0%–20% (and ) showing the significantly larger stability field of the ternary for the same Sn composition associated with the increased mixing entropy in the ternary.
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