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Coengineering of ferroelectric and exchange bias properties in based heterostructures
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10.1063/1.3247893
/content/aip/journal/apl/95/18/10.1063/1.3247893
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3247893
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dependence of the current (a) and of the current and polarization (b) with the electric field for 70 nm-thick BFO (a) and BFO-Mn (b). Magnetic field dependence of the magnetization for a CoFeB (4 nm) film deposited on BFO (c) and Mn-BFO (d). Positive magnetic field values are antiparallel to .

Image of FIG. 2.
FIG. 2.

Out-of-plane PFM phase contrast images of BFO (a), BFO-Mn (b), and BFO/BFO-Mn (c) thin films. The size of the mapped region is .

Image of FIG. 3.
FIG. 3.

(a) Current and polarization vs electric field for a BFO/BFO-Mn bilayer. (b) Magnetization loop along the (100) direction of a 4 nm CoFeB film deposited on the bilayer. (c) R(h) curve of a Co/Cu/CoFeB spin valve deposited on the BFO/BFO-Mn bilayer. The arrows indicate the magnetic states of each electrode for the different resistance states. (d) Sketch of the spin valve deposited on the BFO/BFO-Mn bilayer.

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/content/aip/journal/apl/95/18/10.1063/1.3247893
2009-11-03
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Coengineering of ferroelectric and exchange bias properties in BiFeO3 based heterostructures
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3247893
10.1063/1.3247893
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