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Measurement of effective electron mass in biaxial tensile strained silicon on insulator
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View: Figures


Image of FIG. 1.
FIG. 1.

The left inset shows a sketch of the fabricated Hall-bar MOSFETs on SSOI and SOI. The main panel displays the transfer characteristics of -type Hall-bar MOSFETs on 60 nm biaxial tensile strained SSOI and SOI. The right inset shows a statistical plot of about 80 devices on each SSOI and SOI.

Image of FIG. 2.
FIG. 2.

SdH oscillations in the longitudinal resistance measured on SSOI Hall-bar MOSFET. The inset shows the FT of the oscillations featuring a single peak, confirming that only the lowest subband is occupied.

Image of FIG. 3.
FIG. 3.

(a) Electron concentration determined from fits to the peak positions in the reciprocal magnetic field. (b) The inset shows the fits for the effective electron mass. The main panel displays the dependence of the effective electron mass on the carrier concentration.

Image of FIG. 4.
FIG. 4.

(a) Conductance as a function of the gate voltage. (b) Gate voltages with peak values of the conductance plotted vs gate voltage. Threshold voltage, gate capacitance and can be deduced from the linear fit.

Image of FIG. 5.
FIG. 5.

Longitudinal (a) and transversal (b) effective electron mass for the and valleys as a function of biaxial tensile strain, obtained from the conduction-band curvature calculated in the LDA or the approximation.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Measurement of effective electron mass in biaxial tensile strained silicon on insulator