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(a) SEM image of a nanoimprinted pattern of holes after overcoating with Ag: The coated holes are 225 nm in diameter, 240 nm deep, and have a pitch of 513 nm. (b) SEM image showing a FIB cross section of a fully fabricated n-i-p a-Si:H solar cell grown on the patterned back contact.
Best J-V measurements of the flat reference and patterned n-i-p a-Si:H cells. Inset shows the cell characteristics for each device.
(a) Measured spectral response curves for the flat and patterned cells under bias . (b) Simulated normalized electron generation rates for flat and patterned cells.
Calculated absorption enhancement for different Ag hole diameters and depths at . The solid dot represents the experimental configuration. Inset: Geometry of the simulation cell.
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