1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
f
Low voltage operation in picene thin film field-effect transistor and its physical characteristics
Rent:
Rent this article for
Access full text Article
/content/aip/journal/apl/95/18/10.1063/1.3257373
1.
1.H. Okamoto, N. Kawasaki, Y. Kaji, Y. Kubozono, A. Fujiwara, and M. Yamaji, J. Am. Chem. Soc. 130, 10470 (2008).
http://dx.doi.org/10.1021/ja803291a
2.
2.N. Kawasaki, Y. Kubozono, H. Okamaoto, A. Fujiwara, and M. Yamaji, Appl. Phys. Lett. 94, 043310 (2009).
http://dx.doi.org/10.1063/1.3076124
3.
3.Y. Kaji, R. Mitsuhashi, X. Lee, H. Okamoto, T. Kambe, N. Ikeda, A. Fujiwara, M. Yamaji, K. Omote, and Y. Kubozono, Org. Electron. 10, 432 (2009).
http://dx.doi.org/10.1016/j.orgel.2009.01.006
4.
4.X. Lee, Y. Sugawara, N. Kawasaki, Y. Kaji, R. Mitsuhashi, H. Okamoto, A. Fujiwara, K. Omote, T. Kambe, N. Ikeda, and Y. Kubozono (unpublished).
5.
5.J. Ho, A. Rose, T. Swager, and V. Bulovic, in Solid-State Chemosensitive Organic Devices for Vapor-Phase Detection in Organic Semiconductors in Sensor Applications, edited by D. A. Bernard, R. M. Owens, and G. G. Malliaras, (Springer, Berlin, 2007).
6.
6.A. Bonfiglio, I. Manunza, P. Cosseddue, and E. Orgiu, in Detection of Chemical and Physical Parameters by Means of Organic Field-Effect Transistors in Organic Semiconductors in Sensor Applications, edited by D. A. Bernard, R. M. Owens, and G. G. Malliaras, (Springer, Berlin, 2007).
7.
7.J. B. Chang, V. Liu, V. Subramanian, K. Sivula, C. Luscombe, A. Murphy, J. S. Liu, and J. M. J. Frechet, J. Appl. Phys. 100, 014506 (2006).
http://dx.doi.org/10.1063/1.2208743
8.
8.M. Bouvet, Anal. Bioanal. Chem. 384, 366 (2006).
http://dx.doi.org/10.1007/s00216-005-3257-6
9.
9.C. S. Huang, B. R. Huang, Y. H. Jang, M. S. Tsui, and C. Y. Yeh, Diamond Relat. Mater. 14, 1872 (2005).
http://dx.doi.org/10.1016/j.diamond.2005.09.006
10.
10.T. Nagano, M. Tsutsui, R. Nouchi, N. Kawasaki, Y. Ohta, Y. Kubozono, N. Takahashi, and A. Fujiwara, J. Phys. Chem. C 111, 7211 (2007).
http://dx.doi.org/10.1021/jp0708751
11.
11.N. Nakamura, Abstract of IMR Symposium of Tohoku University, 2007 (unpublished), p. 10.
12.
12.Y. Matsuo, S. Sasaki, and S. Ikehata, Phys. Lett. A 321, 62 (2004).
http://dx.doi.org/10.1016/j.physleta.2003.12.004
13.
13.R. Ruiz, A. C. Mqayer, G. G. Malliaras, B. Nickel, G. Scoles, A. Kazimirov, H. Kim, R. L. Headrick, and Z. Islam, Appl. Phys. Lett. 85, 4926 (2004).
http://dx.doi.org/10.1063/1.1826229
14.
journal-id:
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3257373
Loading
View: Figures

Figures

Image of FIG. 1.

Click to view

FIG. 1.

(a) Device structure of picene FET. (b) Output and (c) transfer curves of picene/Cytop™/ FET measured at 8 Torr of . (d) Transfer curves of picene /polystyrene/ FETs at 8 Torr of . The measurement temperature is 300 K.

Image of FIG. 2.

Click to view

FIG. 2.

(a) Plot of of picene/Cytop™/ FET as a function of time; the gas was exposed to picene/Cytop™/ FET in the time region shown by pink, while in the time region shown by yellow the gas was exhausted by dynamic pumping under . The broken line refers to the baseline which corresponds to under at each time. In the inset of (a), plot of vs concentration is shown. (b) Photoemission spectrum of picene thin films measured under subsequent dynamic pumping at after exposure to for 15 h.

Image of FIG. 3.

Click to view

FIG. 3.

(a) X-ray diffraction pattern of picene thin films at 298 K. (b) Crystal structure of picene and AFM image of picene thin films. The picene thin films are formed on substrate. From the x-ray diffraction pattern shown in (a), the -plane is found to be parallel to the surface. The wavelength of x-ray beam is 1.5418 Å.

Loading

Article metrics loading...

/content/aip/journal/apl/95/18/10.1063/1.3257373
2009-11-03
2014-04-16

Abstract

Low voltage operation of picene thin filmfield-effect transistor(FET) has been realized with 40 nm thick gate dielectrics coated by two polymers, Cytop™ and polystyrene. The picene FETs operated in low absolute gate voltage below 15 V for Cytop™ coated and 30 V for polystyrene coated gate dielectrics, and they showed a significant gas sensing effect down to . Photoemission spectrum clarified that molecules penetrate into the thin films at mole ratio of 1: 1. X-ray diffraction pattern of picene thin films showed highly oriented growth on the polymer-coated .

Loading

Full text loading...

/deliver/fulltext/aip/journal/apl/95/18/1.3257373.html;jsessionid=i12qjdkcsc7u.x-aip-live-06?itemId=/content/aip/journal/apl/95/18/10.1063/1.3257373&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/apl
true
true
This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low voltage operation in picene thin film field-effect transistor and its physical characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3257373
10.1063/1.3257373
SEARCH_EXPAND_ITEM