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In-depth profiles of atomic concentrations in the HfSiON films by RBS analysis. The thicknesses of the HfSiON films are (a) 1 nm, (b) 2 nm, and (c) 3 nm, respectively.
(a) Valence-band spectra and N -edge XAS spectra of the 3-nm-thick HfSiON sample. The valence band densities of states derived from the HfSiON film are obtained by subtracting valence-band spectrum of the H-terminated Si substrate from that of the HfSiON film. The intensity of valence-band spectrum of Si has been rescaled before it is subtracted from that of the HfSiON film. First derivative XAS spectra are also shown. (b) Valence-band spectra of the 3-nm-thick HfSiON film near valence-band maxima for as-grown and annealed samples. Changes upon annealing in nitrogen profiles by RBS are also shown in the inset.
N core-level photoemission spectra for the (a) 1-nm-thick and (b) 3-nm-thick HfSiON films with and without annealing. Each spectrum is deconvoluted into three components, N1, N2, and N3.
, , and for the HfSiON films depending on HfSiON film thickness and thermal annealing.
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