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Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates
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10.1063/1.3258073
/content/aip/journal/apl/95/18/10.1063/1.3258073
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3258073

Figures

Image of FIG. 1.
FIG. 1.

In-depth profiles of atomic concentrations in the HfSiON films by RBS analysis. The thicknesses of the HfSiON films are (a) 1 nm, (b) 2 nm, and (c) 3 nm, respectively.

Image of FIG. 2.
FIG. 2.

(a) Valence-band spectra and N -edge XAS spectra of the 3-nm-thick HfSiON sample. The valence band densities of states derived from the HfSiON film are obtained by subtracting valence-band spectrum of the H-terminated Si substrate from that of the HfSiON film. The intensity of valence-band spectrum of Si has been rescaled before it is subtracted from that of the HfSiON film. First derivative XAS spectra are also shown. (b) Valence-band spectra of the 3-nm-thick HfSiON film near valence-band maxima for as-grown and annealed samples. Changes upon annealing in nitrogen profiles by RBS are also shown in the inset.

Image of FIG. 3.
FIG. 3.

N core-level photoemission spectra for the (a) 1-nm-thick and (b) 3-nm-thick HfSiON films with and without annealing. Each spectrum is deconvoluted into three components, N1, N2, and N3.

Tables

Generic image for table
Table I.

, , and for the HfSiON films depending on HfSiON film thickness and thermal annealing.

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/content/aip/journal/apl/95/18/10.1063/1.3258073
2009-11-06
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Relationship between band alignment and chemical states upon annealing in HfSiON/SiON stacked films on Si substrates
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3258073
10.1063/1.3258073
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