Full text loading...
The band alignment and the creation of effective band gap in (a): InAS/GaSb superlattice and (b) M-structure superlattice. Colored rectangles represent the forbidden band gap of the materials. The atomic engineering capability enables a perfect alignment in the conduction bands of the two structures. (c) Schematic diagram and working principle of the pMp design. The M-barrier blocks the transport of majority holes, while allowing the diffusion of minority electrons and photogenerated carriers from the active region on the left.
Current density versus voltage (I-V) characteristics at 77 K of the reference (dashed-blue) and the passivated sample (solid-red).
QE (blue dots—left axis) and specific detectivity (red stars—right axis) at of the device as a function of applied bias.
Detectivity spectrum of the pMp detector at two operational regimes. The detectivity is calculated based on the equation in the inset, where is wavelength, is QE, J is dark current density, RA is differential resistance-area product, h,c, and Kb are basic constants.
Article metrics loading...