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Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection
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10.1063/1.3258489
/content/aip/journal/apl/95/18/10.1063/1.3258489
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3258489
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The band alignment and the creation of effective band gap in (a): InAS/GaSb superlattice and (b) M-structure superlattice. Colored rectangles represent the forbidden band gap of the materials. The atomic engineering capability enables a perfect alignment in the conduction bands of the two structures. (c) Schematic diagram and working principle of the pMp design. The M-barrier blocks the transport of majority holes, while allowing the diffusion of minority electrons and photogenerated carriers from the active region on the left.

Image of FIG. 2.
FIG. 2.

Current density versus voltage (I-V) characteristics at 77 K of the reference (dashed-blue) and the passivated sample (solid-red).

Image of FIG. 3.
FIG. 3.

QE (blue dots—left axis) and specific detectivity (red stars—right axis) at of the device as a function of applied bias.

Image of FIG. 4.
FIG. 4.

Detectivity spectrum of the pMp detector at two operational regimes. The detectivity is calculated based on the equation in the inset, where is wavelength, is QE, J is dark current density, RA is differential resistance-area product, h,c, and Kb are basic constants.

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/content/aip/journal/apl/95/18/10.1063/1.3258489
2009-11-03
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Minority electron unipolar photodetectors based on type II InAs/GaSb/AlSb superlattices for very long wavelength infrared detection
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3258489
10.1063/1.3258489
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