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Spiral nucleation of silicon solidified on heterogeneous surface of carbon nanocones
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View: Figures


Image of FIG. 1.
FIG. 1.

Snapshots of silicon atoms growing on nanocone at different steps: (a) initial state, (b) 52 steps, (c) 982 steps, and (d) 42310 steps.

Image of FIG. 2.
FIG. 2.

(a) Number of fcc-like, bcc-like, and hcp-like particles during the growth of the crystal nucleus and (b) relationship between the rate of heterogeneous nucleation and the diameters of the CNCs.

Image of FIG. 3.
FIG. 3.

The snapshots of heterogeneous nucleation layers of silicon atoms adhered to the inner surface of CNCs with the spiral growth pattern: (a) open with 19.2°, and (b) close with 38.9°.

Image of FIG. 4.
FIG. 4.

Morphologies of silicon atoms solidifying on CNCs with different layers from the inner to the outer surfaces (from one layer to four layers in turn): (a) open with 19.2°, (b) close with 38.9°, and (c) close with 19.2°.

Image of FIG. 5.
FIG. 5.

The spiral directions of atomic chains around the CNCs (open with 19.2°) and (close with 19.2°). The direction of the atomic strands is along the helix of the CNCs (from one layer to four layers in turn), indicating the existence of the correlation between the spiral direction of the silicon atoms and the spiral direction of the carbon atoms of the CNCs.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Spiral nucleation of silicon solidified on heterogeneous surface of carbon nanocones