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Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing
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View: Figures


Image of FIG. 1.
FIG. 1.

AFM images of islands obtained by deposition of 20 ML Ge at on a pit-patterned Si(001) substrate with a period of 400 nm (a) and of islands grown with same nominal parameters followed by in situ annealing at for 20 min (b). The grayscale represents the first derivative along the horizontal axis. The insets show surface orientation maps with circles marking the steep barn facets in (a) and shallow {105} facets in (b). The corresponding histograms of island height distribution are shown in (c) and (d), respectively. Average height values and relative standard deviation of the distributions are quoted.

Image of FIG. 2.
FIG. 2.

Sequence of AFM images of the same surface area of the annealed sample prior to wet chemical etching (a) and after 60 min (b), 150 min (c), and 500 min (d), wet chemical etching in NHH. The arrow in (a) marks an unoccupied site of the pattern. Arrows in (d) mark residual Si-rich material after almost complete SiGe etching.

Image of FIG. 3.
FIG. 3.

3D AFM images of representative islands after deposition of 20 ML Ge at (a) and after subsequent in situ annealing (b). Cross-section through the center of an annealed island, showing Ge distributions obtained from the linescans shown as solid lines along [110] (c) and [100] (d) directions. Linescans of an as-grown island are included as dashed lines for comparison. (e) Bright field cross-sectional TEM images of an annealed island. Some of the AFM linescans from (c) are superimposed in (e) (dashed green lines), along with a linescan (dashed yellow line) obtained after complete SiGe removal in BPA solution. The inset shows the interface region at higher magnification. Arrows in (c) and (e) mark the positions of the rings seen in Fig. 2(b), while arrows in (d) illustrate the material transfer occurring during annealing.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Shaping site-controlled uniform arrays of SiGe/Si(001) islands by in situ annealing