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Studies of charge transfer processes across donor-acceptor interface using a field effect transistor geometry
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/content/aip/journal/apl/95/18/10.1063/1.3259629
2009-11-05
2014-10-24

Abstract

The existence of donor-type polymerfield effect transistors(FETs), which are FETs exhibiting p-type characteristics and acceptor-type molecular FETs with n-type characteristics, provide an interesting possibility of a combined active bilayer system, especially under photoexcitation. We present a device structure and methodology that is conducive to study donor-acceptor interfacial processes using a FET platform. The changes in FETcharacteristics initiated by the photogenerated carriers in the donor coated acceptor device are studied using steady state and pulsed photoexcitation.

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Scitation: Studies of charge transfer processes across donor-acceptor interface using a field effect transistor geometry
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3259629
10.1063/1.3259629
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