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Studies of charge transfer processes across donor-acceptor interface using a field effect transistor geometry
1.S. H. Park, A. Roy, S. Beaupre, S. Cho, N. Coates, J. S. Moon, D. Moses, M. Leclerc, K. Lee, and A. J. Heeger, Nat. Photonics 3, 297 (2009).
15.V. D. Mihailetchi, J. K. J. V. Duren, P. W. M. Blom, J. C. Hummelen, R. A. J. Janssen, J. M. Kroon, M. T. Rispens, W. J. H. Verhees, and M. J. Wienk, Adv. Funct. Mater. 13, 43 (2003).
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The existence of donor-type polymerfield effect transistors(FETs), which are FETs exhibiting p-type characteristics and acceptor-type molecular FETs with n-type characteristics, provide an interesting possibility of a combined active bilayer system, especially under photoexcitation. We present a device structure and methodology that is conducive to study donor-acceptor interfacial processes using a FET platform. The changes in FETcharacteristics initiated by the photogenerated carriers in the donor coated acceptor device are studied using steady state and pulsed photoexcitation.
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