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(a) characteristics of single layer PCBM based FET at different (accumulation mode), Inset is of single layer PCBM FET and DA-FET and the schematic of DA-FET. (b) Transfer characteristics of DA-FET upon photoexciting (cw, 532 nm) at different intensities and ( 100 V, 60 V). Inset is intensity-modulated spectra at 13 Hz, 40 V, 100 V.
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(a) Transient response of DA-FET to a single pulse photoexcitation (10 ns, 532 nm, ) at 100 V and different . Note that the device used here is different from the device in Fig. 1 with a lower on/off ratio and lower and the absence of transient signal from PCBM FET. Inset is schematic of a representative profile indicating distinct regimes as described in the text. (b) in expanded scale at different upon pulsed-photoexcitation, are the decay constant. The data was acquired at time interval of 40 ns using a scope ( input impedance) triggered by the laser pulse. (c) Drift-diffusion solution of calculated at different cross-section of the sample at different interval of time. At corresponds to initial photogenerated charges at the D-A interface.
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The existence of donor-type polymerfield effect transistors(FETs), which are FETs exhibiting p-type characteristics and acceptor-type molecular FETs with n-type characteristics, provide an interesting possibility of a combined active bilayer system, especially under photoexcitation. We present a device structure and methodology that is conducive to study donor-acceptor interfacial processes using a FET platform. The changes in FETcharacteristics initiated by the photogenerated carriers in the donor coated acceptor device are studied using steady state and pulsed photoexcitation.
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