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Temperature dependence of the remanent magnetization (a) and resistivity (b) of a 10 nm (Ga,Mn)As film with . The inset shows the magnetization hysteresis loops measured at 5, 170, and 190 K with the magnetic field along crystal direction.
Temperature dependence of the resistivity in as-grown (a) and annealed (b) (Ga,Mn)As films with ranging from 5.9% to 20.0%, and dependences of of as-grown and annealed samples are summarized in (c) and (d), respectively.
Temperature dependence of the resistivity of the annealed 10 nm (Ga,Mn)As film with under magnetic field as indicated. The magnetic field is applied perpendicular to the sample surface. The left inset is an enlarged part between 25 and 70 K, and the right inset shows the variation with magnetic field.
Curves of resistivity vs (a), (b), and (c). The lines represent the fitting data, while dots represent the experimental data.
(a) The fit of by using , , and , respectively. The values of got by fitting under different magnetic fields are summarized in (b).
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