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Terahertz vacuum electronic circuits fabricated by UV lithographic molding and deep reactive ion etching
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10.1063/1.3259823
/content/aip/journal/apl/95/18/10.1063/1.3259823
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3259823
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Conceptual process flow of UV LIGA and SEM images of (a) KMPR mold ( thickness) and (b) completed interaction circuit half ( thickness).

Image of FIG. 2.
FIG. 2.

(a) Conceptual process flow of DRIE, (b) SEM images of a full height circuit structure ( thickness), and (c) close SEM views of Au-sputtered sidewalls before (L) and after (R) silicon oxidation.

Image of FIG. 3.
FIG. 3.

AFM-measured surface images on the circuit samples fabricated by (a) UV LIGA (3D image, ) and (b) DRIE (2D image, ).

Image of FIG. 4.
FIG. 4.

Sensitivity analysis of dispersion curve on the fabrication completeness factors: (a) sidewall slope and (b) undercut size vs frequency deviation of dispersion curve.

Image of FIG. 5.
FIG. 5.

(a) Resistivity (surface roughness) vs transmission and reflection coefficients graph, obtained from transient solver simulation of the 10 mm long circuit. (b) Frequency vs theoretically calculated skin depth graph, plotted with AFM-measured surface roughness data of UV LIGA and DRIE samples (Fig. 3 ).

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/content/aip/journal/apl/95/18/10.1063/1.3259823
2009-11-06
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz vacuum electronic circuits fabricated by UV lithographic molding and deep reactive ion etching
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/18/10.1063/1.3259823
10.1063/1.3259823
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