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(a) Conceptual process flow of UV LIGA and SEM images of (a) KMPR mold ( thickness) and (b) completed interaction circuit half ( thickness).
(a) Conceptual process flow of DRIE, (b) SEM images of a full height circuit structure ( thickness), and (c) close SEM views of Au-sputtered sidewalls before (L) and after (R) silicon oxidation.
AFM-measured surface images on the circuit samples fabricated by (a) UV LIGA (3D image, ) and (b) DRIE (2D image, ).
Sensitivity analysis of dispersion curve on the fabrication completeness factors: (a) sidewall slope and (b) undercut size vs frequency deviation of dispersion curve.
(a) Resistivity (surface roughness) vs transmission and reflection coefficients graph, obtained from transient solver simulation of the 10 mm long circuit. (b) Frequency vs theoretically calculated skin depth graph, plotted with AFM-measured surface roughness data of UV LIGA and DRIE samples (Fig. 3 ).
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