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(a) Schematic of the MOS structure with nanocrystal QDs embedded in a thin film and (b) the schematic energy-band diagram of a CdSe QD in .
(a) PL spectra of TOPO- and MPA-capped CdSe/ZnS QDs on the Si substrates and (b) the corresponding high-resolution TEM lattice image of the TOPO-capped CdSe/ZnS QDs.
C-V hysteresis characteristics of the reference and TOPO- and MPA-QD samples.
C-V hysteresis characteristics of (a) the TOPO- and (b) MPA-QD samples treated by plasma for 5 and 10 min along with the nontreated QD samples.
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