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Fe doping dependence of (a) the out-of-plane lattice parameter (both films and bulk are shown, along with Vegard’s law), (b) the lateral grain size , (c) the 10 K saturation magnetization and Curie temperature , (d) the resistivity at 5 K, and (e) the magnitude of the spin polarization , as extracted from film MR and bulk PCAR (Refs. 10–12). Dashed lines are guides to the eye, except in (b) where it is a linear fit. All films are (160–180 nm thick).
(a) Temperature dependence of the resistivity of films (160–180 nm thick) for , 0.06, 0.09, and 0.14. The dashed line shows the same data for a 30 nm thick film. The data are shifted up by for clarity. (b) The 90 kOe MR for the thicker film. (c) The low field MR, for the films shown in (a) [same legend as (a)]. Inset: 10 K voltage dependence of the differential conductance of a 30 nm thick film. Note that the absolute errors on the resistivity values are about 7%, dominated by the film thickness uncertainty.
10 K field dependence of (a) the low field MR, , with current perpendicular and parallel to the (in-plane) field and (b) the magnetization, . All data are for an film (160 nm thick). Inset: Current perpendicular to the field data for 160 nm (solid line) and 30 nm (open circles) thick films. Note that the absolute errors on the magnetization values are about 7%, dominated by the film thickness uncertainty.
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