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RT-PL spectra of samples A , B , and C . Emission (with peak at ) from a single QD layer with 2.0 ML coverage is also included. Inset: Wavelength and IPL as function of ML coverage for the active QDs.
RT-PL spectra of samples C , D , and E . Inset: Wavelength and IPL as function of GaAs spacer thickness.
RT-PL spectra of sample C at different excitation power. Inset: three-dimensional AFM image and IPL as a function of excitation power for sample C. Data was fitted with the dashed line.
Layer structure (top) and sample description (bottom) of the InAs/InGaAs/GaAs BQDs, respectively. For ease of reference, they were labeled as samples A to E.
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