Negative ion surface production through sputtering in hydrogen plasma
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Normalized IDF obtained for a 0.4 Pa plasma, 100 W of injected power, a sample bias of (a) , (b) , (c) , and a sample at 300 K (full line) and 990 K (dashed line), and (d) represents the contribution of sputtering and backscattering mechanisms to the generation as a function positive ion energy.
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