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Simulated reflectivity spectra of three pair airgap GaN DBRs with a GaN thickness of and , respectively. In both cases the second layer component is air with a thickness, where .
SEM images of (a) the sidewall of the three pair GaN/AlInN DBR, (b) the oxidized DBR with porous (AlInN)Ox layers, and (c) the airgap GaN DBR obtained after removal of (AlInN)Ox and protective layers.
(a) Schematic cross-section of the three pair airgap/GaN DBR, and (b) and (c) optical microscope images of the realized structures. The incident spot size is .
Reflectivity spectra measured (a) on the untreated sample, (b) after the oxidation process, and (c) after the etching process (black curves). The corresponding computed spectra are also reported (red dashed curves).
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