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High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
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10.1063/1.3259720
/content/aip/journal/apl/95/19/10.1063/1.3259720
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/19/10.1063/1.3259720
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Simulated reflectivity spectra of three pair airgap GaN DBRs with a GaN thickness of and , respectively. In both cases the second layer component is air with a thickness, where .

Image of FIG. 2.
FIG. 2.

SEM images of (a) the sidewall of the three pair GaN/AlInN DBR, (b) the oxidized DBR with porous (AlInN)Ox layers, and (c) the airgap GaN DBR obtained after removal of (AlInN)Ox and protective layers.

Image of FIG. 3.
FIG. 3.

(a) Schematic cross-section of the three pair airgap/GaN DBR, and (b) and (c) optical microscope images of the realized structures. The incident spot size is .

Image of FIG. 4.
FIG. 4.

Reflectivity spectra measured (a) on the untreated sample, (b) after the oxidation process, and (c) after the etching process (black curves). The corresponding computed spectra are also reported (red dashed curves).

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/content/aip/journal/apl/95/19/10.1063/1.3259720
2009-11-09
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/19/10.1063/1.3259720
10.1063/1.3259720
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