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Strong dependence for strained epitaxial thin films
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10.1063/1.3259922
/content/aip/journal/apl/95/19/10.1063/1.3259922
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/19/10.1063/1.3259922
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Only peaks were observed in all the films on STO, LSAT, LAO, and YAO. The 200 substrate peak of each film was observed in the range of 50° to 60°. The data were recorded in a standard Bragg–Brentano geometry with radiation.

Image of FIG. 2.
FIG. 2.

(a) Representative (103) pole figure of a Co-containing thin film on STO showed a clear fourfold symmetry. The film on YAO substrate contains 45° rotated grains, as shown in Fig. 2(b). The data were recorded in a texture goniometer system operating with radiation.

Image of FIG. 3.
FIG. 3.

The lattice parameter decreases linearly with increasing for the grown films on STO, LSAT, LAO, and YAO. The lattice parameters, and , of the film on LAO are almost identical value of the bulk value.

Image of FIG. 4.
FIG. 4.

(a) Temperature dependence of resistivity for the films on various substrate materials. The measurements were carried out by a standard four-probe method, in which a dc current of 1 mA was employed. A wide transition width of over 3 K was observed for the films on YAO, whereas the film on STO substrate shows an onset of 24.5 K with a sharp transition width of less than 2 K, as shown the inset. (b) Relationship between and the shows a linear dependence. is significantly affected by the lattice distortion.

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/content/aip/journal/apl/95/19/10.1063/1.3259922
2009-11-10
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Strong Tc dependence for strained epitaxial Ba(Fe1−xCox)2As2 thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/19/10.1063/1.3259922
10.1063/1.3259922
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