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Sulfur passivation of InN surface electron accumulation
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10.1063/1.3263725
/content/aip/journal/apl/95/19/10.1063/1.3263725
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/19/10.1063/1.3263725

Figures

Image of FIG. 1.
FIG. 1.

Valence band edge XPS spectra for as-loaded, HCl etched, HCl etched and annealed, S treated, and S annealed InN with respect to the surface Fermi level . Inset: the separation of from the VBM as a function of treatment.

Image of FIG. 2.
FIG. 2.

XPS spectra (symbols) of the (a) In peak for as-loaded InN, (b) In peak for S treated InN, (d) S peak for S treated InN (e) N peak for as loaded, (f) N peak for S treated InN, and (c) the normalized and aligned In peak for as-loaded, HCl etched, HCl etched and annealed, and S treated and annealed InN.

Image of FIG. 3.
FIG. 3.

The carrier concentration as a function of depth from the InN surface for as-loaded (solid line) and S treated (dashed line). Inset: the CBM and VBM positions with respect to the Fermi level as a function of depth from the InN surface.

Tables

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Table I.

The estimated sulfur, chlorine, and oxygen coverage calculated from the S , Cl , and O core level peaks.

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/content/aip/journal/apl/95/19/10.1063/1.3263725
2009-11-13
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Sulfur passivation of InN surface electron accumulation
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/19/10.1063/1.3263725
10.1063/1.3263725
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