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Valence band edge XPS spectra for as-loaded, HCl etched, HCl etched and annealed, S treated, and S annealed InN with respect to the surface Fermi level . Inset: the separation of from the VBM as a function of treatment.
XPS spectra (symbols) of the (a) In peak for as-loaded InN, (b) In peak for S treated InN, (d) S peak for S treated InN (e) N peak for as loaded, (f) N peak for S treated InN, and (c) the normalized and aligned In peak for as-loaded, HCl etched, HCl etched and annealed, and S treated and annealed InN.
The carrier concentration as a function of depth from the InN surface for as-loaded (solid line) and S treated (dashed line). Inset: the CBM and VBM positions with respect to the Fermi level as a function of depth from the InN surface.
The estimated sulfur, chlorine, and oxygen coverage calculated from the S , Cl , and O core level peaks.
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