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Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
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10.1063/1.3264086
/content/aip/journal/apl/95/19/10.1063/1.3264086
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/19/10.1063/1.3264086
/content/aip/journal/apl/95/19/10.1063/1.3264086
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/content/aip/journal/apl/95/19/10.1063/1.3264086
2009-11-13
2014-09-02
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effects of a Gd capping layer on electrical characteristics of metal-oxide-semiconductor field effect transistors with a TaC gate electrode and a HfSiON gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/19/10.1063/1.3264086
10.1063/1.3264086
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