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(a) Front view of the photodetector structure on -Si. The Au/-Si interface serves simultaneously as part of the waveguide and as a Schottky barrier diode. The highly doped substrate allows efficient conduction of photoelectrons through to the bottom Al Ohmic contact. (b) Energy band diagram showing the internal photoemission process. (c) Perpendicular electric field distribution of the mode. Strong confinement of the field to the Au/Si interface is achieved due to the vertical asymmetry of the waveguide.
Coupling efficiency into the mode vs metal stripe thickness for a Au/Si Schottky photodetector at . The coupling efficiency increases with as the field distribution of the mode evolves from being localized to the metal corners to having a smooth single-lobed distribution along the Au/Si interface (shown as insets for and 100 nm, respectively).
Responsivity and minimum detectable power at and 300 K vs metal stripe thickness for a Au/Si Schottky photodetector having a stripe area of . The best performance is observed for larger due increased coupling efficiency.
Responsivity and minimum detectable power at and 300 K vs metal stripe thickness for a Au/Si Schottky photodetector having a stripe area of assuming 100% coupling efficiency. The best performance is observed at smaller due to the increase in internal quantum efficiency from multiple reflections of hot carriers across the metal.
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