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Dislocation structures of {112} twin boundaries in face centered cubic metals
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10.1063/1.3176979
/content/aip/journal/apl/95/2/10.1063/1.3176979
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/2/10.1063/1.3176979
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional TEM micrograph of epitaxial nt Cu sputter deposited on a Si (110) substrate. (b) SAD pattern reveals extra diffraction spots at 1/3(111) positions in the reciprocal space. (c) HRTEM micrograph of grain boundaries. (d) Magnified HRTEM micrograph showing narrow and straight {112} ITBs. (e) Magnified view of wide and diffuse {112} ITBs. A periodic array of defects is observed with a repeat unit of three {111} planes in both [(d) and (e)].

Image of FIG. 2.
FIG. 2.

Dichromatic pattern of a twin boundary showing two types of atomic structure of the boundary. (a) Type-I boundary containing a set of partial dislocations on every (111) plane with a repetitive sequence and (b) type-II boundary containing a set of partial dislocations on every (111) plane with a repetitive sequence . is a pure edge dislocation; and are mixed partial dislocations with opposite sign screw components. The length units are for -axis and for -axis. The solid symbols represent atoms in grain- and the empty symbols represent atoms in grain-. The repeatable pattern with a unit involving three {111} planes is delineated by solid lines. Relaxed atomic structures of incoherent {112} grain boundaries in Cu under zero applied stress, showing (c) atomic structure of a type-I boundary, (d) disregistry plots of the three partial dislocations in the type-I boundary, (e) atomic structure of a type-II boundary, and (f) disregistry plots of the three partial dislocations in the type-II boundary. Different atom colors represent different excess potential energies.

Image of FIG. 3.
FIG. 3.

(a) Projection of (111) plane showing layer stacking positions for the fcc stacking. The change of plane stacking can be accomplished by the glide of any of the three Shockley partial dislocations with Burgers vectors , , or . (b) Partials glide on planes represented by dashed lines, creating the stacking of the structure. (c) Atomic structure of the dissociated {112} ITBs in Cu under applied shear stress, and (d) shear stress and dissociation distance of the emitted partial dislocation from the initial boundary as a function of applied displacement gradients. Atoms are colored by common-neighbor-analysis. The red atoms represent stacking faults, relative to fcc, in the phase (dissociated region) that, if removed would convert it to fcc. The angle is 13.0°.

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/content/aip/journal/apl/95/2/10.1063/1.3176979
2009-07-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Dislocation structures of Σ3 {112} twin boundaries in face centered cubic metals
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/2/10.1063/1.3176979
10.1063/1.3176979
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