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Conduction-band diagram of a portion of the active regions and injectors and the moduli squared of the relevant wave functions of the two-step coupling design under an electric field of 50 kV/cm. The designed emission wavelength is around at RT. The layer sequence of one period (starting from the injection barrier, in angstrom) is 44/24/16/52/12 /50/13/43/23/31/17/29/18/28/19/26/20/25/22/24 /25/25/28/29, where barrier layers are in bold, well layers are in normal font, and the underlined layers are doped (Si, ).
(a) EL from a mesa and (b) spectra of a laser based on the two-step coupling design as functions of the applied voltage per period of active region and injector. All data are taken at in pulsed mode.
Calculated (solid line) and measured EL peak wavenumbers from a mesa as well as measured laser emission wavenumbers (/circles) from laser 1 (1.5 mm cavity length and ridge width) and laser 2 (1.5 mm cavity length and ridge width) as functions of voltage per period of active region and injector. The arrows indicate the laser thresholds. All experimental results are taken at room temperature in pulsed mode.
EL peak wavenumbers and laser emission wavenumbers measured from the direction orthogonal to the laser ridge. All experimental data were measured at room temperature in pulsed mode (80 kHz, 45 ns pulse width). The figure inset shows the intersubband EL detected from a laser 20% above threshold and the fitted curve.
(a) Measured voltage and light versus current density characteristics and differential resistance of a laser as well as characteristics of a mesa. All data were measured at in pulsed mode. (b) Calculated effective upper laser state lifetime as a function of applied voltage for the two-step coupling design and a comparable conventional laser design.
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