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Effects of annealing on electronic and structural characteristics of pentacene thin-film transistors on polyimide gate dielectrics
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We have systematically investigated the effects of annealing on the structures and electronic performances of pentacene field-effect transistors on polyimide gate dielectric layers. The mobility of these transistors increases from 0.07 to by annealing at . The density of charge traps can be reduced by annealing, thereby resulting in the improvement of the transistor characteristics. The x-ray diffraction measurements indicate that the crystal structure of pentacene on polyimide does not change after annealing up to , while the crystal structure of pentacene on exhibits transitions from the (001) thin film phase to the bulk phase.
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