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Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity
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10.1063/1.3180704
/content/aip/journal/apl/95/2/10.1063/1.3180704
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/2/10.1063/1.3180704
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of an all-optical switch using QDs as an optical nonlinear medium. The vertically aligned FP cavity consists of 12/25 periods of for the front/back mirrors. Optical field distribution inside the cavity is shown by the oscillation curve. InAs QD layers are placed at antinode positions of the optical field.

Image of FIG. 2.
FIG. 2.

Cavity reflection and PL emission of QDs as functions of wavelength. For cavity reflection spectra, the solid curve presents experimental results while the dashed curve is the theoretical design.

Image of FIG. 3.
FIG. 3.

Differential reflectivity as a function of delay time for both switching processes via GS and ES, respectively. The inset shows the carrier dynamics inside a QD.

Image of FIG. 4.
FIG. 4.

Wavelength dependence of the switching time (open circles). By changing the incident angle, the operation wavelength of the QD switch is tuned from 1210 to 1240 nm (solid triangles). Dashed curves are from simulation results.

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/content/aip/journal/apl/95/2/10.1063/1.3180704
2009-07-16
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Vertical-geometry all-optical switches based on InAs/GaAs quantum dots in a cavity
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/2/10.1063/1.3180704
10.1063/1.3180704
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