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Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio
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Image of FIG. 1.

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FIG. 1.

(a) The schematic device structure of a SCLT. (b) SEM image of device before Al collector deposition. (c) The schematic curve of a SCLT. Three regions with different slopes are observed.

Image of FIG. 2.

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FIG. 2.

(a) The normalized current-voltage curves of the ITO/P3HT/Al diodes. The ITO surface is treated with or without plasma. The inset shows the schematic energy level diagrams under low and high voltage. The black solid lines represent the Fermi level of ITO with low and high work function. The black dashed line represents the highest occupied molecular orbital of P3HT while device is under low voltage bias. The red dot-dashed line represents the highest occupied molecular orbital of P3HT while device is under high voltage bias. (b) The normalized current-voltage curves of the diodes fabricated on ITO substrate with different aging time. Images of water drop on ITO surface with aging time of 2 and 62 min are compared in the inset.

Image of FIG. 3.

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FIG. 3.

The characteristics of SCLTs made with aging time of (a) 2 min and (b) 62 min. The on/off ratio of SCLTs made with aging time of (c) 2 min and (d) 62 min.

Image of FIG. 4.

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FIG. 4.

(a) Transfer characteristics of the inverter at various . The schematic inverter circuit is shown in the inset. The load resistance is . (b) The corresponding gain values of the inverter.

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/content/aip/journal/apl/95/20/10.1063/1.3261749
2009-11-20
2014-04-25

Abstract

Vertical polymer space-charge limited transistor (SCLT) operated with an ultralow voltage is demonstrated. The influence of aging effect of the oxygen plasmatreated indium tin oxide electrode on the hole injection barrier and on the transistor characteristics is investigated. By reducing the hole injection barrier, the on/off ratio as high as is obtained at a collector to emitter voltage as low as −0.84 V. The low operation voltage is crucial to the development of low-power large-area polymertransistor array. Inverter characteristics are also demonstrated by connecting a SCLT with a load resistor.

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Scitation: Reduced hole injection barrier for achieving ultralow voltage polymer space-charge-limited transistor with a high on/off current ratio
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/20/10.1063/1.3261749
10.1063/1.3261749
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