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Blue light-emitting diodes with a roughened backside fabricated by wet etching
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) The schematic diagram of the RPB-LED structure with the roughened patterned backside on the N-face GaN surface is shown here. (b) and (c) The cross-sectional SEM micrographs of the RPB-LED are observed at a 45° tilted angle. The grid lateral etching channel and the inverted pyramidal structure are observed at the bottom of the LED structure close to the interface.

Image of FIG. 2.
FIG. 2.

The optical microscopy images of the (a) ST-LED and (b) RPB-LED are shown in these figures where the grid line pattern close to interface is observed in the RPB-LED structure. The light-intensity profiles of the (c) ST-LED and (d) the RPB-LED at a 20 mA operation current are measured by a beam profiler.

Image of FIG. 3.
FIG. 3.

(a) When the laser spots focus on the RPB-LED with and without the roughened backside surface and on the ST-LED, the spectra are measured at room temperature. (b) The EL emission wavelength is measured at about 453 nm for both LED structures at a 20 mA operating current. (c) For both LED samples, the current-voltage (I-V) characteristics and the light-output power as a function of the operating current are measured here. (d) The line-scan light intensities of the LED structure with and without a roughened backside surface are measured here.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Blue light-emitting diodes with a roughened backside fabricated by wet etching