1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure
Rent:
Rent this article for
USD
10.1063/1.3263155
/content/aip/journal/apl/95/20/10.1063/1.3263155
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/20/10.1063/1.3263155
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

I-V performance shows one OFF state and two ON states. The inset is a schematic drawing of a typical memory device structure.

Image of FIG. 2.
FIG. 2.

Continuous current-voltage tests of the device for the ON states. The experiment data are presented by open symbols. The red square and the blue downtriangle data indicate the I-V characteristic of the device in the state in the range of 0 to 4V and 0 to 6V, respectively. The following pink star data has the same scan condition as the blue one but is found to deviate upwards. The wine pentagon plots show the state. The dot line is the curve fit of the state complying with Poole–Frenkel mechanism.

Image of FIG. 3.
FIG. 3.

Comparison of multilevel states to the state. The open square is the OFF state. The solid star is the state. All the triangle curves are different multilevel states.

Image of FIG. 4.
FIG. 4.

Impedance measurements of the device in different conductive states. (a) The top and the bottom figures show the phase angle and the absolute value of the impedance with respect to the frequency, respectively. The inset draws the model of a capacitor and a resistor connected in parallel. (b) Capacitance ratio of C to with respect to different states. C represents the capacitance of the device in different states, and represents the capacitance of the device in the OFF state tested under high frequency.

Loading

Article metrics loading...

/content/aip/journal/apl/95/20/10.1063/1.3263155
2009-11-17
2014-04-17
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Study of multi-ON states in nonvolatile memory based on metal-insulator-metal structure
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/20/10.1063/1.3263155
10.1063/1.3263155
SEARCH_EXPAND_ITEM