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Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence
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10.1063/1.3264967
/content/aip/journal/apl/95/20/10.1063/1.3264967
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/20/10.1063/1.3264967
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) HRXRD -scan in the (004) reflection of five samples with varying strain balanced layer thicknesses, with arrows indicating the zeroth order SL peak (b) plot of GaP thickness in ML vs in-plane strain value of HRXRD data with two QW theories and 3D-modified QD strain balancing theory.

Image of FIG. 2.
FIG. 2.

(a) 5× QD layers and spacers with strain balanced condition, showing QD size uniformity and vertical alignment, (b) zoomed image of three QDs indicating GaP, InAs, and GaAs layers, (c) 5× QD layers and spacers with no strain balanced condition, indicating loss of size uniformity.

Image of FIG. 3.
FIG. 3.

PL integrated intensity values as a function of GaP thickness indicating a peak in integrated PL value between 3.7 and 4.7 ML with the highest value from the sample with 4.2 ML. Inset shows PL spectrum of 4.2 ML sample.

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/content/aip/journal/apl/95/20/10.1063/1.3264967
2009-11-17
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Evaluation of strain balancing layer thickness for InAs/GaAs quantum dot arrays using high resolution x-ray diffraction and photoluminescence
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/20/10.1063/1.3264967
10.1063/1.3264967
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