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Formation of InAs/InGaAsP quantum-dashes on InP(001)
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10.1063/1.3265733
/content/aip/journal/apl/95/20/10.1063/1.3265733
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/20/10.1063/1.3265733
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Schematic diagram of the layer structure studied by XSTM. (b) AFM images, showing the dependence of the quantum dot/dash shape on the growth temperature and the indium flow. (c) Room temperature PL spectra of quantum dot/dash ensembles.

Image of FIG. 2.
FIG. 2.

(a) Atomically resolved filled-state XSTM image of the InGaAsP/InP interface marked by two white arrows, taken at a sample voltage of −2.6 V. (b) Height profile across the dashed line in (a) with atomic height corrugation (gray) and material-induced height variation (black). Its ptp variation is indicated by black arrows.

Image of FIG. 3.
FIG. 3.

Filled-state XSTM images of the first two quantum dash layers at (a) the surface, taken at −2.7 V, and (b) the (110) surface, taken at −2.6 V. The dashed box in (a) indicates the decomposition in the Q1.20 interlayer with a column of InAs-rich material just between two quantum dashes. The tilted shape of the XSTM image in (a) is due to a correction of a scan piezo effect.

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/content/aip/journal/apl/95/20/10.1063/1.3265733
2009-11-16
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Formation of InAs/InGaAsP quantum-dashes on InP(001)
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/20/10.1063/1.3265733
10.1063/1.3265733
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