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Terahertz lasing from silicon by infrared Raman scattering on bismuth centers
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View: Figures


Image of FIG. 1.
FIG. 1.

Dependences of the Si:Bi laser emission on the pump macropulse energy when pumped in the vicinity of the bismuth state (pump frequency ) and in the conduction band bottom . A sketch of the experiment geometry is shown in the upper left corner.

Image of FIG. 2.
FIG. 2.

Typical pump (FELIX) and Si laser emission pulses. The gates used for measurements of the time-resolved pump spectra in Fig. 3, are shown. The lower trace is exaggerated by a factor of 5.

Image of FIG. 3.
FIG. 3.

(a) Spectral dependence of the pump radiation transmitted through the Si:Bi sample. The inset shows the positions of bismuth impurity lines. (b) Emission from the Si:Bi laser as a function of pump frequency. The two curves correspond to signals registered with the gates shown in Fig. 2.

Image of FIG. 4.
FIG. 4.

Typical emission spectra from the Si:Bi laser for different pump wavelengths . The inset shows the Raman laser scheme. The upward arrow represents the pumping and the downward arrow represents the laser emission.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Terahertz lasing from silicon by infrared Raman scattering on bismuth centers