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(a) Schematic of device structure. (b) A brightfield cross-sectional transmission electron micrograph showing nanocrystalline CdS coating on sol-gel ZnO. (c) A simplified band structure for P3HT/CdS/ZnO PV device based on values reported in the literature for bulk materials.
(a) Comparison of behavior for (black) ZnO/P3HT bilayer and (red) ZnO/CdS/P3HT devices under simulated solar illumination. (b) Semilogarithmic plot comparing the behavior in the dark of the same devices. The series resistance calculated near 3 V applied bias is 6.9 and for the unmodified and CdS-modified devices, respectively. Textured shape of the ZnO/CdS/P3HT curve at low current density is due to detection limits of the equipment.
EQE spectra for P3HT/ZnO and P3HT/CdS/ZnO PV devices. Peaks representing contributions to photocurrent from ZnO, CdS, and P3HT are labeled.
Average PV performance characteristics for hybrid planar PV cells.
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