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Solution-processed conjugated polymer organic light-emitting diodes with high built-in potential by solution- and solid-state doping
15.R. Q. Png, P. J. Chia, J. C. Tang, B. Liu, S. Sivaramakrishnan, M. Zhou, S. H. Khong, H. S. O. Chan, J. H. Burroughes, L. L. Chua, R. H. Friend, and P. K. H. Ho, “High-performace polymer semiconducting heterostructure devices by nitrene-mediated photocrosslinking of alkyl side-chains,” Nature Mater. (to be published).
16.Y. S. Huang, S. Westenhoff, I. Avilov, P. Sreearunothai, J. M. Hodgkiss, C. Deleener, R. H. Friend, and D. Beljonne, Nature Mater. 7, 483 (2008).
18.M. Zhou, L. L. Chua, R. Q. Png, C. K. Yong, S. Sivaramakrishnan, P. J. Chia, A. T. S. Wee, R. H. Friend, and P. K. H. Ho, Phys. Rev. Lett. 103, 036601 (2009).
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Polymer homojunction light-emitting diodes(LEDs) comprising -doped poly(dioctylfluorene-alt-benzothiadiazole) (F8BT) hole-injection, intrinsic F8BT emitter, and -doped F8BT electron-injection layers have been demonstrated. A thin F8BT film was photocrosslinked and bulk -doped by nitronium oxidation, then overcoated with an F8BT layer which was then surface -doped by contact printing with naphthalenide on an elastomeric stamp. These LEDs exhibit high built-in potential , efficient bipolar injection, and greatly improved external electroluminescence efficiency compared to control devices without the structure. A modulated photocurrent technique was used to measure this , which systematically improves with diodestructure.
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