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Solution-processed conjugated polymer organic light-emitting diodes with high built-in potential by solution- and solid-state doping
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FIG. 1.

Optical transmission spectra of the intrinsic and doped F8BT films on glass substrates. Chemical structure of F8BT is shown in the inset.

Image of FIG. 2.

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FIG. 2.

Schematic of the fabrication of the homojunction diode. All steps are conducted in the glovebox.

Image of FIG. 3.

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FIG. 3.

characteristics of the devices measured at room temperature.

Image of FIG. 4.

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FIG. 4.

Built-in potential measurement of the devices by a modulated photocurrent technique at room temperature.

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/content/aip/journal/apl/95/21/10.1063/1.3257979
2009-11-24
2014-04-16

Abstract

Polymer homojunction light-emitting diodes(LEDs) comprising -doped poly(dioctylfluorene-alt-benzothiadiazole) (F8BT) hole-injection, intrinsic F8BT emitter, and -doped F8BT electron-injection layers have been demonstrated. A thin F8BT film was photocrosslinked and bulk -doped by nitronium oxidation, then overcoated with an F8BT layer which was then surface -doped by contact printing with naphthalenide on an elastomeric stamp. These LEDs exhibit high built-in potential , efficient bipolar injection, and greatly improved external electroluminescence efficiency compared to control devices without the structure. A modulated photocurrent technique was used to measure this , which systematically improves with diodestructure.

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Scitation: Solution-processed conjugated polymer organic p-i-n light-emitting diodes with high built-in potential by solution- and solid-state doping
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3257979
10.1063/1.3257979
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