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Ultrafast carrier mobilities in high-resistivity iron-doped photoconducting antennas
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10.1063/1.3265734
/content/aip/journal/apl/95/21/10.1063/1.3265734
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3265734

Figures

Image of FIG. 1.
FIG. 1.

Diagram of the experimental setup for THz radiation power measurements.

Image of FIG. 2.
FIG. 2.

Variation of the THz radiation power with the square of the electric field in a photoconducting (PC) antenna for different electrode gap spacing (▼ 0.8 mm, ◼ 0.6 mm, ● 0.4 mm, and ▲ 0.2 mm). Inset: Variation of the THz radiation power with the aperture area A of PC antennas for . The incident laser power is 250 mW. Lines are linear fits to the data.

Image of FIG. 3.
FIG. 3.

Variation of the THz radiation power with electric field for , semi-insulating (SI) GaAs photoconducting (PC) antennas with 0.4 mm electrode spacing and InAs. The incident laser power is 250 mW.

Tables

Generic image for table
Table I.

Electronic properties of .

Generic image for table
Table II.

Ultrafast mobility of .

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/content/aip/journal/apl/95/21/10.1063/1.3265734
2009-11-23
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ultrafast carrier mobilities in high-resistivity iron-doped Ga0.69In0.31As photoconducting antennas
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3265734
10.1063/1.3265734
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