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Interfacial layer dependence on device property of high- TiLaO Ge/Si -type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness
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10.1063/1.3265947
/content/aip/journal/apl/95/21/10.1063/1.3265947
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3265947
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

characteristics of TaN/TiLaO Ge/Si -MOS capacitors with or without the inserted and interfacial layer and after 450 or RTA. The device size is .

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM images of -MOS capacitors (a) before and (b) after RTA. (c) -MOS capacitors after RTA.

Image of FIG. 3.
FIG. 3.

SIMS profile of TaN/TiLaO Ge/Si -MOS structure with inserted (a) and (b) interfacial layer before and after RTA.

Image of FIG. 4.
FIG. 4.

The Ge XPS spectra of structure before and after RTA.

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/content/aip/journal/apl/95/21/10.1063/1.3265947
2009-11-24
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Interfacial layer dependence on device property of high-κ TiLaO Ge/Si N-type metal-oxide-semiconductor capacitors at small equivalent-oxide thickness
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3265947
10.1063/1.3265947
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