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characteristics of TaN/TiLaO Ge/Si -MOS capacitors with or without the inserted and interfacial layer and after 450 or RTA. The device size is .
Cross-sectional TEM images of -MOS capacitors (a) before and (b) after RTA. (c) -MOS capacitors after RTA.
SIMS profile of TaN/TiLaO Ge/Si -MOS structure with inserted (a) and (b) interfacial layer before and after RTA.
The Ge XPS spectra of structure before and after RTA.
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