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Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
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10.1063/1.3266526
/content/aip/journal/apl/95/21/10.1063/1.3266526
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266526
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Current-voltage characteristics of circular diode structures with aluminum pads in diameter for three different contact formation schemes as schematically illustrated in (b)–(d).

Image of FIG. 2.
FIG. 2.

Transfer characteristics of pseudo-MOSFETs with three different contact configurations. The inset shows an electron micrograph combined with a schematic of a fabricated device with , , and .

Image of FIG. 3.
FIG. 3.

(a) Schematics of the planar, horizontal contact configuration with coupling between metal electrode and semiconductor. Figure 3(b) shows the local DOS in the case of strong coupling and (c) in the case of weak coupling.

Image of FIG. 4.
FIG. 4.

Transfer characteristics of devices with and decreasing coupling strength; a reference curve for and strong coupling is plotted, too. The inset shows vs for three different .

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/content/aip/journal/apl/95/21/10.1063/1.3266526
2009-11-25
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Suppression of ambipolar behavior in metallic source/drain metal-oxide-semiconductor field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266526
10.1063/1.3266526
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