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Current-voltage characteristics of circular diode structures with aluminum pads in diameter for three different contact formation schemes as schematically illustrated in (b)–(d).
Transfer characteristics of pseudo-MOSFETs with three different contact configurations. The inset shows an electron micrograph combined with a schematic of a fabricated device with , , and .
(a) Schematics of the planar, horizontal contact configuration with coupling between metal electrode and semiconductor. Figure 3(b) shows the local DOS in the case of strong coupling and (c) in the case of weak coupling.
Transfer characteristics of devices with and decreasing coupling strength; a reference curve for and strong coupling is plotted, too. The inset shows vs for three different .
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