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Recombination mechanisms in highly efficient thin film based solar cells
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10.1063/1.3266829
/content/aip/journal/apl/95/21/10.1063/1.3266829
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266829
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized external quantum efficiency of the Zn(S,O) and CdS buffered solar cells.

Image of FIG. 2.
FIG. 2.

Dark and light I(V) characteristics before and after light soaking.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of the diode ideality factor for the Zn(S,O) and CdS buffered cells. (b) Temperature dependence of the open circuit voltage for the Zn(S,O) and CdS buffered cells.

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/content/aip/journal/apl/95/21/10.1063/1.3266829
2009-11-24
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Recombination mechanisms in highly efficient thin film Zn(S,O)/Cu(In,Ga)S2 based solar cells
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266829
10.1063/1.3266829
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