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Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
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10.1063/1.3266859
/content/aip/journal/apl/95/21/10.1063/1.3266859
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266859
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

[(a)–(d)] Defect selective passivation process flow.

Image of FIG. 2.
FIG. 2.

[(a)–(c)] SEM image of the sample surface corresponding to the process step in Figs. 1(a)–1(c), respectively.

Image of FIG. 3.
FIG. 3.

(a) TEM image of LED sample with defect selective passivation. (b) SEM image of the defect passivated sample after molten KOH etching. (c) SEM image of the defect passivated sample after high temperature etching.

Image of FIG. 4.
FIG. 4.

[(a) and (b)] Cross section CL and SEM image of the defect passivated epi-wafer under same magnification. (c) L-I and V-I curve of the DP-LED and R-LED.

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/content/aip/journal/apl/95/21/10.1063/1.3266859
2009-11-24
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Defect selective passivation in GaN epitaxial growth and its application to light emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266859
10.1063/1.3266859
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