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scan of the epitaxial BST/MgO/ZnO film on -plane sapphire substrate.
[(a)–(e)] RHEED patterns of MgO and ZnO grown on -plane sapphire: (a) ZnO azimuth, (b) ZnO azimuth, (c) MgO parallel to ZnO azimuth, (d) MgO parallel to ZnO azimuth, and (e) MgO rotated by 15° with respect to ZnO and azimuths. (f) scan patterns of asymmetrical reflections of BST (022), ZnO , and -sapphire .
In-plane epitaxial relationship between BST/MgO (001) and ZnO (0001).
Capacitance and loss tangent of BST/MgO/ZnO/-sapphire capacitor structure.
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