1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes
Rent:
Rent this article for
USD
10.1063/1.3266866
/content/aip/journal/apl/95/21/10.1063/1.3266866
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266866
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The energy band profiles of the C1 and the HH1 at Brillouin zone center for the ground state of (a) conventional rectangular QW and (b) graded QW with and without internal field.

Image of FIG. 2.
FIG. 2.

(a) Variation of the momentum-matrix elements for the C1-HH1 transition with wave vector on the x-y plane. (b) Electron and hole wave function envelops at the Brillouin zone center.

Image of FIG. 3.
FIG. 3.

TE model C1-HH1 spontaneous emission spectrums of (a) rectangular QW and (b) graded QW under various carrier densities: (1) , (2) , (3) , and (4) .

Image of FIG. 4.
FIG. 4.

The variation of spontaneous emission rate of TE model C1-HH1 spontaneous emission spectrums of the rectangular QW and graded QW with the increase of carrier density.

Loading

Article metrics loading...

/content/aip/journal/apl/95/21/10.1063/1.3266866
2009-11-24
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High spontaneous emission rate asymmetrically graded 480 nm InGaN/GaN quantum well light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266866
10.1063/1.3266866
SEARCH_EXPAND_ITEM