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Grain size dependence of electrical and optical properties in Nb-doped anatase
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10.1063/1.3266867
/content/aip/journal/apl/95/21/10.1063/1.3266867
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266867
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Typical XRD patterns of (a) a 51.5-nm-thick anatase film (sample ) and (b) a 50.3-nm-thick anatase film (sample ). Insets show the deviation of the (004) peak from the standard position (marked with a vertical lines) for all the films. The samples notation is labeled and the labels sequence is denoted by the black arrows, indicating the increase of the film thickness. (c) The mean grain size (out-of-plane) as a function of the nominal thickness for both anatase and films. Representative AFM images of (d) a 25.76-nm-thick anatase film (sample ) and (e) a 21.5-nm-thick anatase film (sample ).

Image of FIG. 2.
FIG. 2.

Electrical properties of films as a function of mean grain size : (a) conductivity , (b) carrier concentration , and (c) Hall mobility . Solid line indicates the total mobility obtained by least-squares fitting.

Image of FIG. 3.
FIG. 3.

as a function of the photon energy for (a) anatase films and (b) anatase films. Insets show as a function of the photon energy (samples notation is the same as in Fig. 1). The dashed lines show the representative linear extrapolations for the determination of the band gap, .

Image of FIG. 4.
FIG. 4.

Band gap energy vs mean grain size for the anatase (solid squares) and the anatase (solid circles). For anatase , as a function of mean grain size is also plotted (solid triangles).

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/content/aip/journal/apl/95/21/10.1063/1.3266867
2009-11-25
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Grain size dependence of electrical and optical properties in Nb-doped anatase TiO2
http://aip.metastore.ingenta.com/content/aip/journal/apl/95/21/10.1063/1.3266867
10.1063/1.3266867
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